The polarization response in InAs quantum dots: theoretical correlation between composition and electronic properties.
Identifieur interne : 000983 ( Main/Exploration ); précédent : 000982; suivant : 000984The polarization response in InAs quantum dots: theoretical correlation between composition and electronic properties.
Auteurs : RBID : pubmed:22469563English descriptors
- KwdEn :
- MESH :
- chemical , chemistry : Arsenicals, Indium.
- methods : Crystallization.
- Computer Simulation, Electric Conductivity, Materials Testing, Models, Chemical, Molecular Conformation, Particle Size, Quantum Dots.
Abstract
III-V growth and surface conditions strongly influence the physical structure and resulting optical properties of self-assembled quantum dots (QDs). Beyond the design of a desired active optical wavelength, the polarization response of QDs is of particular interest for optical communications and quantum information science. Previous theoretical studies based on a pure InAs QD model failed to reproduce experimentally observed polarization properties. In this work, multi-million atom simulations are performed in an effort to understand the correlation between chemical composition and polarization properties of QDs. A systematic analysis of QD structural parameters leads us to propose a two-layer composition model, mimicking In segregation and In-Ga intermixing effects. This model, consistent with mostly accepted compositional findings, allows us to accurately fit the experimental PL spectra. The detailed study of QD morphology parameters presented here serves as a tool for using growth dynamics to engineer the strain field inside and around the QD structures, allowing tuning of the polarization response.
DOI: 10.1088/0957-4484/23/16/165202
PubMed: 22469563
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en">The polarization response in InAs quantum dots: theoretical correlation between composition and electronic properties.</title><author><name sortKey="Usman, Muhammad" uniqKey="Usman M">Muhammad Usman</name><affiliation wicri:level="1"><nlm:affiliation>Tyndall National Institute, Lee Maltings, Dyke Parade, Cork, Ireland. usman@alumni.purdue.edu</nlm:affiliation><country xml:lang="fr">Irlande (pays)</country><wicri:regionArea>Tyndall National Institute, Lee Maltings, Dyke Parade, Cork</wicri:regionArea></affiliation></author><author><name sortKey="Tasco, Vittorianna" uniqKey="Tasco V">Vittorianna Tasco</name></author><author><name sortKey="Todaro, Maria Teresa" uniqKey="Todaro M">Maria Teresa Todaro</name></author><author><name sortKey="De Giorgi, Milena" uniqKey="De Giorgi M">Milena De Giorgi</name></author><author><name sortKey="O Reilly, Eoin P" uniqKey="O Reilly E">Eoin P O'Reilly</name></author><author><name sortKey="Klimeck, Gerhard" uniqKey="Klimeck G">Gerhard Klimeck</name></author><author><name sortKey="Passaseo, Adriana" uniqKey="Passaseo A">Adriana Passaseo</name></author></titleStmt><publicationStmt><date when="2012">2012</date><idno type="doi">10.1088/0957-4484/23/16/165202</idno><idno type="RBID">pubmed:22469563</idno><idno type="pmid">22469563</idno><idno type="wicri:Area/Main/Corpus">000D96</idno><idno type="wicri:Area/Main/Curation">000D96</idno><idno type="wicri:Area/Main/Exploration">000983</idno></publicationStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Arsenicals (chemistry)</term><term>Computer Simulation</term><term>Crystallization (methods)</term><term>Electric Conductivity</term><term>Indium (chemistry)</term><term>Materials Testing</term><term>Models, Chemical</term><term>Molecular Conformation</term><term>Particle Size</term><term>Quantum Dots</term></keywords><keywords scheme="MESH" type="chemical" qualifier="chemistry" xml:lang="en"><term>Arsenicals</term><term>Indium</term></keywords><keywords scheme="MESH" qualifier="methods" xml:lang="en"><term>Crystallization</term></keywords><keywords scheme="MESH" xml:lang="en"><term>Computer Simulation</term><term>Electric Conductivity</term><term>Materials Testing</term><term>Models, Chemical</term><term>Molecular Conformation</term><term>Particle Size</term><term>Quantum Dots</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">III-V growth and surface conditions strongly influence the physical structure and resulting optical properties of self-assembled quantum dots (QDs). Beyond the design of a desired active optical wavelength, the polarization response of QDs is of particular interest for optical communications and quantum information science. Previous theoretical studies based on a pure InAs QD model failed to reproduce experimentally observed polarization properties. In this work, multi-million atom simulations are performed in an effort to understand the correlation between chemical composition and polarization properties of QDs. A systematic analysis of QD structural parameters leads us to propose a two-layer composition model, mimicking In segregation and In-Ga intermixing effects. This model, consistent with mostly accepted compositional findings, allows us to accurately fit the experimental PL spectra. The detailed study of QD morphology parameters presented here serves as a tool for using growth dynamics to engineer the strain field inside and around the QD structures, allowing tuning of the polarization response.</div></front></TEI><pubmed><MedlineCitation Owner="NLM" Status="MEDLINE"><PMID Version="1">22469563</PMID><DateCreated><Year>2012</Year><Month>04</Month><Day>03</Day></DateCreated><DateCompleted><Year>2012</Year><Month>07</Month><Day>31</Day></DateCompleted><DateRevised><Year>2013</Year><Month>11</Month><Day>21</Day></DateRevised><Article PubModel="Print-Electronic"><Journal><ISSN IssnType="Electronic">1361-6528</ISSN><JournalIssue CitedMedium="Internet"><Volume>23</Volume><Issue>16</Issue><PubDate><Year>2012</Year><Month>Apr</Month><Day>27</Day></PubDate></JournalIssue><Title>Nanotechnology</Title><ISOAbbreviation>Nanotechnology</ISOAbbreviation></Journal><ArticleTitle>The polarization response in InAs quantum dots: theoretical correlation between composition and electronic properties.</ArticleTitle><Pagination><MedlinePgn>165202</MedlinePgn></Pagination><ELocationID EIdType="doi" ValidYN="Y">10.1088/0957-4484/23/16/165202</ELocationID><Abstract><AbstractText>III-V growth and surface conditions strongly influence the physical structure and resulting optical properties of self-assembled quantum dots (QDs). Beyond the design of a desired active optical wavelength, the polarization response of QDs is of particular interest for optical communications and quantum information science. Previous theoretical studies based on a pure InAs QD model failed to reproduce experimentally observed polarization properties. In this work, multi-million atom simulations are performed in an effort to understand the correlation between chemical composition and polarization properties of QDs. A systematic analysis of QD structural parameters leads us to propose a two-layer composition model, mimicking In segregation and In-Ga intermixing effects. This model, consistent with mostly accepted compositional findings, allows us to accurately fit the experimental PL spectra. The detailed study of QD morphology parameters presented here serves as a tool for using growth dynamics to engineer the strain field inside and around the QD structures, allowing tuning of the polarization response.</AbstractText></Abstract><AuthorList CompleteYN="Y"><Author ValidYN="Y"><LastName>Usman</LastName><ForeName>Muhammad</ForeName><Initials>M</Initials><Affiliation>Tyndall National Institute, Lee Maltings, Dyke Parade, Cork, Ireland. usman@alumni.purdue.edu</Affiliation></Author><Author ValidYN="Y"><LastName>Tasco</LastName><ForeName>Vittorianna</ForeName><Initials>V</Initials></Author><Author ValidYN="Y"><LastName>Todaro</LastName><ForeName>Maria Teresa</ForeName><Initials>MT</Initials></Author><Author ValidYN="Y"><LastName>De Giorgi</LastName><ForeName>Milena</ForeName><Initials>M</Initials></Author><Author ValidYN="Y"><LastName>O'Reilly</LastName><ForeName>Eoin P</ForeName><Initials>EP</Initials></Author><Author ValidYN="Y"><LastName>Klimeck</LastName><ForeName>Gerhard</ForeName><Initials>G</Initials></Author><Author ValidYN="Y"><LastName>Passaseo</LastName><ForeName>Adriana</ForeName><Initials>A</Initials></Author></AuthorList><Language>eng</Language><PublicationTypeList><PublicationType>Journal Article</PublicationType><PublicationType>Research Support, Non-U.S. Gov't</PublicationType><PublicationType>Research Support, U.S. Gov't, Non-P.H.S.</PublicationType></PublicationTypeList><ArticleDate DateType="Electronic"><Year>2012</Year><Month>04</Month><Day>02</Day></ArticleDate></Article><MedlineJournalInfo><Country>England</Country><MedlineTA>Nanotechnology</MedlineTA><NlmUniqueID>101241272</NlmUniqueID><ISSNLinking>0957-4484</ISSNLinking></MedlineJournalInfo><ChemicalList><Chemical><RegistryNumber>0</RegistryNumber><NameOfSubstance>Arsenicals</NameOfSubstance></Chemical><Chemical><RegistryNumber>045A6V3VFX</RegistryNumber><NameOfSubstance>Indium</NameOfSubstance></Chemical><Chemical><RegistryNumber>1303-11-3</RegistryNumber><NameOfSubstance>indium arsenide</NameOfSubstance></Chemical></ChemicalList><CitationSubset>IM</CitationSubset><MeshHeadingList><MeshHeading><DescriptorName MajorTopicYN="N">Arsenicals</DescriptorName><QualifierName MajorTopicYN="Y">chemistry</QualifierName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Computer Simulation</DescriptorName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Crystallization</DescriptorName><QualifierName MajorTopicYN="Y">methods</QualifierName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Electric Conductivity</DescriptorName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Indium</DescriptorName><QualifierName MajorTopicYN="Y">chemistry</QualifierName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Materials Testing</DescriptorName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="Y">Models, Chemical</DescriptorName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Molecular Conformation</DescriptorName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Particle Size</DescriptorName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="Y">Quantum Dots</DescriptorName></MeshHeading></MeshHeadingList></MedlineCitation><PubmedData><History><PubMedPubDate PubStatus="aheadofprint"><Year>2012</Year><Month>4</Month><Day>02</Day></PubMedPubDate><PubMedPubDate PubStatus="entrez"><Year>2012</Year><Month>4</Month><Day>4</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="pubmed"><Year>2012</Year><Month>4</Month><Day>4</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="medline"><Year>2012</Year><Month>8</Month><Day>1</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate></History><PublicationStatus>ppublish</PublicationStatus><ArticleIdList><ArticleId IdType="doi">10.1088/0957-4484/23/16/165202</ArticleId><ArticleId IdType="pubmed">22469563</ArticleId></ArticleIdList></PubmedData></pubmed></record>Pour manipuler ce document sous Unix (Dilib)
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